PAPER 2026.09.01 · 10 min read

Inducing nanocracks to secure both efficiency and stretch in an OLED

Stretchable OLED research has so far been entirely about stopping cracks from forming. A Northeast Normal University group went the other way. They designed where and in which direction the cracks would run, standing 65-nanometre-wide cracks vertically and only inside the emissive layer. At 1/10 of a visible wavelength they are invisible, and the vertical current path is not broken. An external quantum efficiency of 24.7% passes the previous record for a stretchable device.

AuthorsFirst author Chuang Xue, corresponding Xiaoli Zhao · Qingxin Tang(Northeast Normal University), 12 authors in total · joint with Jilin Normal University
PublishedNature Communications, online 2026-08-27 · Article in Press (volume and pages not assigned) · DOI 10.1038/s41467-026-76917-2

The most troublesome component in making a screen that stretches is the emissive layer. The emissive layer of an OLED on sale today is small-molecule organic material laid down by vacuum deposition, and this material breaks before it stretches even 1%. The elongation at break of the active layer measured in this paper is about 0.5%. To talk about a screen that wraps around a wrist while the layer that actually emits light shatters at 0.5% is to have no discussion at all.

So this field has long asked “how do we keep cracks from forming?” The Northeast Normal University group inverted the question. Cracks will form anyway. In that case, let us design where, how narrowly and in which direction they form.

To give the result first, the device delivered a current efficiency of 85.7 cd/A and an external quantum efficiency of 24.7%. The previous best for a stretchable small-molecule OLED was 47.9 cd/A and 17.0%, so efficiency was not sold to buy stretchability. Both were raised together.

1. Why insist on a material that breaks at 0.5%

First, why this awkward material is insisted upon has to be set out.

Small-molecule organic semiconductors have high colour purity and good film uniformity. Above all, several layers can be stacked precisely by vacuum deposition. That is what lets today’s commercial OLEDs pile hole injection, hole transport, electron blocking, emissive and electron transport layers on top of each other at the nanometre scale. Devices made from polymer semiconductors are generally an order of magnitude lower in emission efficiency.

So a stretchable display cannot discard this material if it is to become a real product. The moment it is discarded, efficiency goes with it.

2. The two routes so far, and what they cost

Existing approaches fell broadly into two.

Geometric stretching (gs-OLED) leaves the device itself rigid and solves it through shape. A flexible device is attached to a pre-stretched substrate and released to form wrinkles, or rigid islands are joined by stretchable interconnects. The advantage is that the materials can be used as they are, but the surface ripples or the emission is broken up island by island, so the screen does not look uniform.

Intrinsic stretching (is-OLED) blends the small molecules with an elastomer or polymer to make the emissive layer itself stretch. The screen is uniform, but the cost is plain. What makes small molecules efficient is the dense π–π stacking of the molecules, and the moment an elastomer is blended in, that stacking is disturbed. Efficiency and stretchability eat into each other.

In numbers, the best record for this route was a current efficiency of 47.9 cd/A, an external quantum efficiency of 17.0%, maximum elongation of 60%, and 100 cycles at 20% strain.

3. Not blocking them, making them

The route the group took is a third one. The paper calls it active crack engineering.

The idea is simple. Rather than stretching the device whole, the emissive layer is split into a great many microdevices at very narrow spacing. The gaps between the split pieces absorb the stretch while the pieces themselves stay as they were and emit light. Those gaps are the induced nanocracks.

For this strategy to hold, two things have to be true at once.

First, the gaps must not be visible. The measured crack width is about 65 nanometres. Visible wavelengths are 400 to 700 nanometres, so the crack is around 1/10 of a wavelength, and no dark diffraction fringes arise. It is not a visible fissure but something closer to optically non-existent.

Second, the current path must not be broken. Charge in an OLED flows up and down. If cracks run only vertically, they divide the emissive layer sideways while leaving the vertical path intact. Conversely, the moment a crack lies down horizontally, electrode and emissive layer part and the device dies. So the real task of this work is not “making cracks” but “standing the cracks vertically.”

Concept diagram of the interfacial stress control strategy with the device stack, cross-sectional electron microscope images unstretched and at 80% stretch, a 4×5 pixel array photograph with emission spectra, and photographs of the device bent, twisted, crumpled and attached to a finger
Figure 1. (a) The device stack and the concept of the strategy. Strain adaptation layer (ADL), interfacial buffer layer (IBL), polymer anode, active layer and aluminium cathode in order. The bars in the middle are the modulus and elongation at break of each layer. (b) Focused ion beam electron microscope cross-sections. Above is before deformation, below at 80% strain, with vertical nanocracks confined inside the active layer alone. Scale bar 500 nm. (c, d) Photograph and emission spectra of the 4×5 pixel array. Stretch it 80% and the CIE coordinates do not move from (0.34, 0.60). (e-j) The device stretched, bent, twisted, crumpled, attached to skin and with a fist clenched. Nature Communications (2026) Fig. 1, CC BY-NC-ND 4.0

4. Covering with a buffer layer above and below

The layer structure reveals the design intent.

At the very bottom is the strain adaptation layer (ADL), a 3M VHB 4918 elastomer with an elongation at break of 860%. It is the layer that actually takes the stretch. The trouble is that this layer has a modulus of 15.6 kPa while the whole functional stack going on top of it has a modulus of 33.6 GPa. Butt two layers 2 million times apart and stress piles up at the boundary.

So an interfacial buffer layer (IBL) goes between them. It is NOA68, a UV-curing thiol-ester adhesive, sitting between the two at a modulus of 127.4 MPa. It forms Al–S bonds with the aluminium cathode and C=S bonds with the anode, so the interfaces interlock physically.

The key is that this buffer layer was laid on above the functional stack as well as below it. The comparison of three structures is the clearest passage in this paper.

Three-dimensional optical microscope images of three device structures from 0 to 80% strain with cross-sectional electron micrographs of each, finite element stress distributions beneath them, and luminance and electrode resistance curves against strain
Figure 2. It is decided by where the buffer layer goes. (a) Three-dimensional optical microscope images of the three structures at 0, 40 and 80% strain. Scale bar 100 µm. (b-d) The 80% strain cross-section of each structure with the finite element stress distribution beneath. Maximum stress at the centre falls 565.4 → 103.2 → 32.2 MPa. Scale bar 1 µm. (e) Luminance retention against strain. (f, g) Normalized anode and cathode resistance up to 400% strain. Nature Communications (2026) Fig. 3, CC BY-NC-ND 4.0

The maximum stress at the centre of the device, computed by finite element analysis, comes down like this.

StructureMax stress (80% strain)Result
adaptation + functional565.4 MPacracks tens of micrometres wide at 40% strain, 46.4% of the area
adaptation + buffer (below) + functional103.2 MPacrack width reduced, but the upper layer left unguarded
adaptation + buffer + functional + buffer32.2 MPano surface cracking at 80% strain, only 65 nm cracks inside the emissive layer

Stress fell by a factor of 17.6. And one value in the luminance curve catches the eye. The structure covered above and below is at 102% of its initial luminance when stretched 50%. It got brighter on being stretched, which reads as the result of the layer spacing changing minutely in a top-emitting structure and altering the optical cavity condition.

The electrode resistance is worth noting too. At 400% strain the anode resistance is 3.3 times its initial value and the cathode 6.8 times. That means charge injection is maintained, and it is the physical basis for the device staying lit up to 250%.

5. Electrode asymmetry sets the crack direction

What stands the cracks vertically is not the buffer layer but the difference in properties between the upper and lower electrodes. The group showed this by making three combinations.

Schematics and modulus and elongation bars for three upper and lower electrode combinations, with three cross-sectional electron micrographs at 80% strain
Figure 3. What sets the crack direction is not the buffer layer but electrode asymmetry. (a) A symmetric high-modulus structure with aluminium on both sides. (b) A symmetric low-modulus structure with PEDOT:PSS/carbon nanotube on both sides, where directionless round cracks scatter. (c) An asymmetric structure, soft below and stiff above. Only vertical cracks remain, with no lateral offset. Scale bar 500 nm. Nature Communications (2026) Fig. 5, CC BY-NC-ND 4.0

Aluminium on both sides (both stiff). Aluminium, at 67.5 GPa modulus and 5% elongation at break, presses the emissive layer, at 12.5 GPa and 0.5%, from above and below. A great many vertical through-cracks form. The crack direction is right but the density is excessive.

PEDOT:PSS/carbon nanotube on both sides (both soft). At a modulus of 4.4 GPa it is close to the emissive layer, with 10% elongation at break. There are no interfacial cracks, but instead directionless round cracks scatter inside the emissive layer. Where the current path will be cut cannot be predicted.

Soft below, stiff above (asymmetric). Anode 4.4 GPa and 10%, cathode 67.5 GPa and 5%. That gradient gives the stress a direction, and the cracks grow vertically only, with no lateral offset. This combination was adopted.

In short, the buffer layer reduces the magnitude of the stress, and electrode asymmetry sets the direction of the cracks. Each does a different job.

6. A window of 140 seconds of ultraviolet

The buffer layer is a UV-curing material, so exposure time is itself a process variable. This is the passage that lands most concretely on the industry side.

Three-dimensional optical microscope images of the buffer layer by ultraviolet exposure time with elongation, toughness and modulus curves, finite element stress distributions, images by buffer layer thickness, and cyclic tensile test curves
Figure 4. How far the buffer layer is cured is a process variable. (a, b) Three-dimensional optical microscope images at 0, 80 and 200% strain for exposure times of 20, 140 and 220 seconds. Scale bar 50 µm. (c, d) Elongation at break and toughness, and modulus, against exposure time. The first two peak at 140 seconds and come down, while the modulus alone keeps rising. (e, f) Luminance curves by exposure time and the stress distribution at 80% strain. (g, h) The effect of buffer layer thickness from 0 to 20 µm. (i) The result of 1,500 cycles at 30% strain. Nature Communications (2026) Fig. 4, CC BY-NC-ND 4.0

Expose for only 20 seconds and crosslinking is insufficient, giving an elongation at break of 31.8% and toughness of 0.72 MJ/m³. Stretch it only 80% and cracks spread across the whole device surface.

At 140 seconds it peaks, at 84.3% elongation and 17.0 MJ/m³ toughness. The polymer chains are entangled just enough to slide past each other and let stress flow away. Here the device shows only a few fine lines on the surface even at 200% strain.

Push to 220 seconds and over-crosslinking sets in. The chains are tied so they cannot move, elongation at break falls to 54.6%, and the modulus alone shoots up to 311.5 MPa. Stress concentrates at the crosslinks, creating the very place where fracture starts.

Look at modulus alone and it seems to keep improving, while the device gets worse. It is the kind of problem missed when a process is optimized around a single material property.

Buffer layer thickness has to be set alongside. As it goes from 0 to 20 micrometres the microcrack area falls, and at 20 micrometres it holds 76.2% luminance at 200% strain.

7. Four colours, and repetition

If the strategy worked only for one particular emitter, it would end with a single paper. The group changed the emitter and rebuilt the same structure.

Emission spectra, current density-voltage-luminance curves and external quantum efficiency curves of blue, yellow and red devices, characteristic changes against strain, photographs of a patterned device stretched 200%, and photographs of four-colour devices on a finger joint
Figure 5. The same structure, rebuilt with only the emitter changed. (a-c) Emission spectra, current density, voltage and luminance curves, and external quantum efficiency of the blue Firpic, yellow PO-01 and red Ir(piq)₃ devices. (d-f) Current density and luminance up to 250% strain for all three colours. (g-i) The patterned device stretched 200%. Scale bar 5 mm. (j, k) Four-colour emission patterns, and emission while a finger joint is clenched and opened with the device attached. Nature Communications (2026) Fig. 6, CC BY-NC-ND 4.0
ColourEmitterPeak wavelengthTurn-on voltageMax luminanceMax EQE
greenIr(ppy)3520 nm2.5 V16,050 cd/m²24.7%
blueFirpic472 nm3.5 V5,660 cd/m²17.7%
yellowPO-01560 nm2.5 V17,320 cd/m²23.9%
redIr(piq)3628 nm3.0 V7,940 cd/m²19.9%

All three colours kept over 90% of their current density and over 80% of their luminance after 100% strain, and the patterned device held even emission at 200% strain.

Cyclic durability is as follows.

  • 86.5% luminance retained after 1,500 cycles of 30% uniaxial tension
  • 81.2% after 1,500 cycles of 20% biaxial tension
  • 90.4% at a bending radius of 1 mm
  • 80.4% after 10,000 cycles of bending at a 5 mm radius

8. Reading the number 250% precisely

The most striking figure in this paper is 250%, and it deserves to be read precisely.

Device fabrication process flow and energy level diagram, current density-voltage-luminance curves, efficiency curves, a scatter plot comparing with previous work, photographs of the device stretched from 0 to 250%, and spatial luminance distributions before and after 150% strain
Figure 6. (a) The fabrication process. The buffer layer is spin coated onto the anode and cured, peeled from the silicon substrate, then the active layer and cathode are deposited and buffer and adaptation layers laid on again. (b) Energy levels. (c, d) Current density, voltage and luminance, and efficiency curves in the undeformed state. (e) Comparison with previous stretchable light-emitting devices. (f) The device stretched from 0 to 250%. Scale bar 10 mm. (g-i) Spatial luminance distribution before and after 150% strain. Nature Communications (2026) Fig. 2, CC BY-NC-ND 4.0

The paper states this value as “a state in which the whole electrode area is expanded 250%, at which point the elongation of the emitting region itself is about 50%.” That is, when the whole device is stretched two and a half times, the strain the light-emitting part actually experiences is a fraction of it. The elastomer and interconnects outside the emitting region take up the stretch first.

That does not make 250% an inflated figure. What a device attached to a wrist or a finger joint actually experiences is the deformation of the whole module, and whether the screen stays lit under that condition is what matters. But reading it as “the emissive layer stretched 250%” is wrong. Had the emissive layer stretched 250%, it would contradict the paper’s own premise of 0.5% elongation at break.

For the same reason 83.2% and 63.4% have to be kept apart. What is retained at 250% strain is 83.2% on a current efficiency (cd/A) basis, and 63.4% on a luminance basis. It is not that more current was pushed through to preserve brightness; it is that this much efficiency per unit current remains.

One more thing. This paper is an Article in Press. The accepted manuscript has been released ahead of the formal version, so there is room for figures to be adjusted in the final edited version.

9. Where it touches the industry

The most industrial sentence in this work is neither the efficiency nor the elongation; it is in the materials list.

The device’s organic layers are HATCN · TAPC · TCTa · 26DCzPPy · B3PYMPM · Ir(ppy)3. All commercial materials. The buffer layer NOA68 and the adaptation layer 3M VHB 4918 are catalogue items too, and the deposition is conventional high-vacuum thermal evaporation as it stands.

This contrasts with a good many stretchable device papers that presuppose custom-synthesized materials. If the performance came not from developing a new material but from changing how already-used materials are stacked, then no new procurement burden falls on either the materials maker or the panel maker.

There is of course more to get past. How to put encapsulation onto a top-emitting structure, and whether pixels can be driven by thin film transistors in a stretched state, are outside this paper’s scope. The 4×5 pixel array is not actively driven.

Even so, moving the question from “keep cracks from forming” to “decide where the cracks will run” is this paper’s contribution. If a material with 0.5% elongation at break can be used in a device that stretches 250%, there are plenty of brittle materials besides emissive layers to which the same logic would apply.

elongation at break
How far a material stretches just before it snaps. The small-molecule organic emissive layer is 0.5%, the elastomer adaptation layer of this device 860%.
active crack engineering
An approach that, rather than blocking cracks, induces them by designing their position, width and direction. The core concept of this paper.
interfacial buffer layer (IBL)
A layer of intermediate properties placed between two layers of greatly differing modulus to distribute stress. Here it is the UV-curing adhesive NOA68.
finite element analysis (FEA)
Numerical analysis that divides a structure finely to compute the stress distribution. Used here to compare the maximum stress at the centre of the three structures.